Semiconductor device and method of fabricating the same

摘要

A semiconductor device includes a semiconductor substrate, a gate electrode formed over the semiconductor substrate and a first interlevel insulating layer which is formed over the semiconductor substrate and has first and second contact holes defined by the first interlevel insulating layer. The semiconductor device also includes a first wiring pattern formed in the first contact hole and on the first interlevel insulating layer, a protection layer covering the first wiring pattern and a second interlevel insulating layer which is formed over the first interlevel insulating layer and has a third contact hole defined by the second interlevel insulating layer. The semiconductor device further includes the third contact hole being located on the second contact hole and a second wiring pattern formed in the second and third contact holes and on the second interlevel insulating layer.