发明名称 |
Compound, high-K, gate and capacitor insulator layer |
摘要 |
A gate or capacitor insulator structure using a first grown oxide layer, a high-k dielectric material on the grown oxide layer, and a deposited oxide layer on the high-k dielectric material. The deposited oxide layer is preferably a densified deposited oxide layer. A conducting layer, such as a gate or capacitor plate, may overlay the densified oxide layer.
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申请公布号 |
US6548854(B1) |
申请公布日期 |
2003.04.15 |
申请号 |
US19970995435 |
申请日期 |
1997.12.22 |
申请人 |
AGERE SYSTEMS INC. |
发明人 |
KIZILYALLI ISIK C.;MA YI;ROY PRADIP KUMAR |
分类号 |
H01L21/02;H01L21/28;H01L29/51;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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