| 摘要 |
A method for performing lithographic process to a multi-layered photoresist layer. The method at least includes the following steps. First of all, a substrate is provided. Then, a first photoresist film is formed on the substrate, and a mask layer is formed on the first photoresist film, wherein the mask layer is different from the first photoresist film. Next, a second photoresist film is formed on the mask layer, and a pattern is transferred into the second photoresist film by using lithographic process. Then, the mask layer is etched by using the second photoresist film as a first mask such that the pattern is transferred into layer. Finally, the pattern is transferred into the first photoresist film by using the mask layer as a second mask.
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