发明名称 |
Multi-thickness silicon films on a single semiconductor-on-insulator (SOI) chip using simox |
摘要 |
A semiconductor-on-insulator (SOI) chip. The SOI chip having a substrate; a buried oxide (BOX) layer disposed on the substrate; and an active layer disposed on the BOX layer, the active layer divided into a first tile and a second tile, the first tile having a first thickness and the second tile having a second thickness, the second thickness being smaller than the first thickness; wherein the BOX layer is formed under the active layer in an area of the first tile by implanting oxygen ions with a first energy level and a first dosage and the BOX layer is formed under the active layer in an area of the second tile by implanting oxygen ions with a second energy level and a second dosage.
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申请公布号 |
US6548369(B1) |
申请公布日期 |
2003.04.15 |
申请号 |
US20010812630 |
申请日期 |
2001.03.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
VAN BENTUM RALF |
分类号 |
H01L21/762;H01L21/84;H01L27/12;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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