| 摘要 |
PURPOSE: To prevent the characteristics of a ferroelectric film or a high dielectric film from deteriorating due to water molecules remaining in the vicinity of an element containing a ferroelectric film or a high dielectric film. CONSTITUTION: In a cleaning process being performed later than a process for forming a ferroelectric thin film 110 becoming a part of a ferroelectric thin film capacitor, dry cleaning, e.g. ashing, Ar aerosol cleaning, CO2 cleaning, cleaning with CO2 in supercritical state, or UV cleaning, is employed. Alternatively, cleaning liquid of organic solvent, or the like, substantially containing no moisture, is employed in the cleaning process.
|
