CONTACT LINE IN SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A contact line in a semiconductor device and a method for forming the same are provided to prevent a leakage current between a contact line and a semiconductor substrate, reducing resistance of the contact line. CONSTITUTION: A gate pattern(130) is formed on the active region of a semiconductor substrate(100). An ion implantation is performed using an ion implantation mask as the gate pattern. An impurity region is formed on the active region. An interlayer dielectric(160) is formed on the entire surface of the resultant structure. A contact hole(170) is formed to expose the active region. An SEG layer is formed on the exposed active region. A silicide layer(190) is formed by a silicidation process. A contact line is formed.