摘要 |
PROBLEM TO BE SOLVED: To manufacture a high-quality silicon thin film by effectively removing residual oxygen in a processing atmosphere in a laser ablation method. SOLUTION: In a vacuum chamber 4, laser beam 1 is cast on a silicon target 8 and the material of the target 8 is emitted by the energy of the laser beam 1 and is deposited on a substrate 5 to form a silicon thin film 5. In this case, the inside of the vacuum chamber 1 is set to a silane gas atmosphere or a mixed gas atmosphere of silane gas and hydrogen gas. |