发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that air being mixed in resin remains in a fine pattern when a number of semiconductor devices are subjected to common molding in a CSP-type semiconductor device and at the same time one-time transfer mold process in a manufacturing method of the semiconductor device before. SOLUTION: In the manufacturing method of semiconductor devices, a through hole 42 is provided on the opposite surface of a gate 383 in a die 38 to remove air that is mixed in resin in a transfer mold process, thus sending away the air that is mixed in the resin in transfer mold to the through hole 42 for removal to the outside of the mold 38, and hence flatly forming the back of a semiconductor device 21 merely by the transfer mold process.
申请公布号 JP2003110057(A) 申请公布日期 2003.04.11
申请号 JP20010300952 申请日期 2001.09.28
申请人 SANYO ELECTRIC CO LTD 发明人 AIBOSHI TAKESHI;FUKUDA HIROKAZU;SAKAI HARUHIKO
分类号 H01L23/12;H01L21/56 主分类号 H01L23/12
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