发明名称 BIDIRECTIONAL TWO-TERMINAL THYRISTOR
摘要 PROBLEM TO BE SOLVED: To provide a bidirectional two-terminal thyristor which is ignited in a short time as far as possible without reducing the continuity areas of a plurality of formed unit thyristors and which increases a surge-resistant amount. SOLUTION: A first N-type conductive region 2 and a second N-type conductive region 3 are formed on a semiconductor substrate 100. First P-type conductive regions 4, 5 and 6 are formed inside the region 2, and second P-type conductive regions 1, 8 and 9 are formed inside the region 3 in such a way that they are symmetric with respect to a point and that they are not overlapped as viewed from a plane. A third P-type conductive region 12 is arranged to be adjacent to the region 2, and a fourth P-type conductive region 13 is arranged to be adjacent to the region 3. The bidirectional two-terminal thristor is constituted so as to increase the common base current amplification factorα1 of a first transistor in which the region 2 is used as a collector, in which the region 12, the region 13 and a substrate conductive region 1 are used as a base, and in which the region 3 is used as an emitter.
申请公布号 JP2003109967(A) 申请公布日期 2003.04.11
申请号 JP20010302100 申请日期 2001.09.28
申请人 SHINDENGEN ELECTRIC MFG CO LTD 发明人 TOMITA MASAAKI;TAKAHASHI KAZUNORI;HACHIMAN TOMOHIKO
分类号 H01L21/332;(IPC1-7):H01L21/332 主分类号 H01L21/332
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