发明名称 |
HIGH-SPEED RESPONSE PHOTOCURRENT MULTIPLYING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To accelerate the responding speed of a photocurrent multiplying device. SOLUTION: A sandwiching type cell is formed by forming an NTCDA single crystal 2 having a thickness of 167μm as a photocurrent multiplying layer and forming Au thin films on both surfaces as electrodes 4 and 6 by a vapor depositing method in a thickness of 20 nm of each. When a voltage is applied to the single crystal 2 from a DC power source 8 via the electrodes 4 and 6 and irradiated with monochromatic light, the multiplied photocurrent flows between the electrodes 4 and 6. The rise of the photocurrent at the time of optically turning on the element is considerably fast as compared with the vapor deposited film used as the photocurrent multiplying layer, and can rapidly respond.
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申请公布号 |
JP2003110132(A) |
申请公布日期 |
2003.04.11 |
申请号 |
JP20010301575 |
申请日期 |
2001.09.28 |
申请人 |
JAPAN SCIENCE & TECHNOLOGY CORP |
发明人 |
HIRAMOTO MASAHIRO;YOKOYAMA MASAAKI |
分类号 |
G01J1/02;G01T1/20;H01L31/08;H01L51/00;H01L51/05;H01L51/10;H01L51/42;(IPC1-7):H01L31/08 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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