| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterostructure field-effect transistor which comprises a thin barrier wall and whose high electron concentration is realized without spoiling high electron mobility. SOLUTION: In a GaN channel Layer 202, a region B whose distance Z from an interface with an AlXGa1- XN barrier layer 201 is Z1 to Z1 +dB is doped with an n-type dopant such as silicon or the like. Z1 represents a value larger than the width Z0 (where 30Å<=Z0 <=40Å) of a region in which two-dimensional electrons are gathered. Electrons supplied from the n-type dopant such as the silicon or the like inside the region B are drawn to a heterointerface by a strong channel electric field so as to contribute to conduction as the two-dimensional electrons. Consequently, the electrons are not subjected directly to an impurity ionization scattering operation due to the dopant, and the high electron mobility of the semiconductor device is maintained.
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