发明名称 |
MEMBER FOR TREATING HYDROGEN OF SILICON WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide a member for treating hydrogen of a silicon wafer capable of improving the lifetime of the silicon wafer and permitting manufacture at a low cost by preventing impurities from being taken into the silicon wafer at the time of heat treatment in hydrogen. SOLUTION: This is a member for treating hydrogen of a silicon wafer using high-purity synthetic silica glass particles deriving from alkali metal silicate and having the total quantity of metal impurities of 1μg/g or less. The total quantity of metal impurities is desirably 0.5μg/g or less.
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申请公布号 |
JP2003109963(A) |
申请公布日期 |
2003.04.11 |
申请号 |
JP20010300439 |
申请日期 |
2001.09.28 |
申请人 |
WATANABE SHOKO:KK;ASAHI DENKA KOGYO KK |
发明人 |
KUSUHARA MASAKI;WATABE HIROYUKI;UEHARA HIROSHI;SANPEI KEIKO;KURITA ARIYASU;OMI JINICHI;TAKAHASHI MAKIO;MORITA HIROSHI |
分类号 |
C03C3/06;H01L21/22;H01L21/324;(IPC1-7):H01L21/324 |
主分类号 |
C03C3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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