| 摘要 |
PROBLEM TO BE SOLVED: To provide an efficient nitride semiconductor light emitting device, a nitride semiconductor device and a method for manufacturing the same where a characteristic and yield are high by reducing the number of manufacturing processes, time for manufacturing, the bending of a substrate, crystal defect, etc. SOLUTION: The device is provided with the substrate, a first buffer layer formed on the substrate, having a plurality of grooves on its surface and composed of GaN, and a second buffer layer formed on the first buffer layer, having a flat surface by burying the plurality of grooves and composed of GaN obtained by doping Mg.
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