| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize a semiconductor device having power amplifier. SOLUTION: Three or more MESFETs 2 are formed in a line on a semiconductor chip. A transmission line 1, whose width is nearly equal to that of the region where the MESFETs 2 are lined, is formed in a line with the line of the MESFETs 2. The MESFETs 2 and the transmission line 1 are connected with each other on one end side of the transmission line 1. Further, an adjusting circuit 3 is connected in parallel with the transmission line 1, and an output is combined, while achieving the matching by the transmission line 1 and the adjusting circuit 3.
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