FORMATION METHOD OF WIRING

摘要

PROBLEM TO BE SOLVED: To provide a formation method of wiring which can ensure an enough cross-sectional area even if the width of a mask, which decides a wiring width, is narrow and can prevent an increase in wiring resistance. SOLUTION: In wiring of a semiconductor device formed of an upper layer thin film 106/Ti film 105, an AlCu film 104 and a lower layer TiN film 103/Ti film 102, the upper layer TiN film 106/Ti film 105 and the lower layer TiN film 103/Ti film 102 are etched in a forward tapered shape.