发明名称 PATTERNING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of reducing a part which is not etched when an etching film is formed into an extremely fine pattern by patterning through wet etching. SOLUTION: In a process shown in Figure 1 (a), a silicon oxide film 12 is formed on a silicon substrate 11. Then a resist mask 13 is formed on the silicon oxide film 12. At this point, as shown in Figure 1 (a), an opening region 14 of small dimensions and an opening region 15 of comparatively large dimensions residue on the resist mask 13 at the same time. Next, in a process shown in Figure 1 (b), liquid 16 (pure water) soluble in etchant in a wet etching process which is stated later and forms a small contact angle with the resist mask 13 is applied on the surface of the wafer W. Then, in a process shown in Figure 1 (c), while the liquid 16 as pure water keeps staying on the resist mask 13 and the silicon oxide film 12 (water applied in layer), the substrate is dipped into a buffer hydrofluoric acid water solution (a mixture of HF/H2 O and HF/NH4 F).
申请公布号 JP2003109937(A) 申请公布日期 2003.04.11
申请号 JP20010306268 申请日期 2001.10.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KUDO CHIAKI;ONUMA MAKOTO
分类号 H01L21/28;H01L21/306;H01L21/768;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L27/10;(IPC1-7):H01L21/306;H01L21/823 主分类号 H01L21/28
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