| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for manufacturing an embedded gate type semiconductor device, which can readily confirm the quality of a channel at an earlier stage of manufacturing processes, correctly confirm the quality of the channel in terms of electric characteristics after completion of a basic structure, confirm the validity of manufacturing requirements, and as a result enables highly efficient production. SOLUTION: The semiconductor device has a structure in which the principal plane of a first conductivity-type semiconductor substrate 1 is provided with a striped or meshed second conductivity-type semiconductor layer 3, and a first conductivity-type semiconductor layer 2 is formed on the second conductivity-type semiconductor layer 3 by chemical vapor deposition to embed the second conductivity-type semiconductor layer 3 in the first conductivity-type semiconductor layer 2. As a means for specifying electrical resistance components in a current path region sandwiched between the adjacent second conductivity-type semiconductor layers 3, the method for manufacturing the semiconductor device obtains a difference between a resistance value of a resistance monitor element C, where a substrate locally formed with the second conductivity-type semiconductor layer 3 is not embedded, and a resistance value of the semiconductor device.
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