| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide manufacturing methods of an electron emission element and an electron source converging beams and reducing leak by forming the film and patterning an electron emission layer so that the electron emission layer is prevented from receiving physical and chemical damage in micro holes at high controllability. SOLUTION: A structure formed with a cathode electrode 2, an insulating layer 3, a gate electrode 4, and an opening part on a substrate 1 is disposed in a chamber and an electron emission film is formed on the structure by a plasma film formation. Then, ion in the plasma is irradiated while rotating the structure with its inclined by a prescribed angleθin the same chamber, so that the electron emission film except for the electron emission film in the opening part is removed by etching and the electron emission layer 5 is formed into a desired shape.</p> |
