| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a wiring trench can be filled with Cu of huge grains. SOLUTION: A Cu film 8 of 100 nm thick is deposited on TaN 7 by sputtering, and a Cu film 9 of 500 nm thick is formed thereon by electrolytic plating. Subsequently, an RF bias is applied onto a substrate and the growing surface is irradiated with argon ions, thus forming a Cu layer 10 of 700 nm thick thicker than the total thickness of the Cu films 8 and 9 by sputtering. When it is heat-treated, a huge grain Cu film 11 is obtained and trench wiring 12 is obtained by shaping it.
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