发明名称 MAGNETORESISTANCE EFFECT FILM, AND MEMORY USING IT
摘要 PROBLEM TO BE SOLVED: To provide a magnetoresistance effect film which uses a vertical magnetization film and has a greater change rate of magnetoresistance. SOLUTION: In the magnetoresistance effect film including first and second magnetic layers 52, 56, and a non-magnetic layer 54 held between the first and second magnetic layers 52, 56, at least one of the first and second magnetic layers 52, 56 is constructed as a ferrimagnetic layer which uses rare earth metals Fe and Co as chief components, and high spin polarizability magnetic layers 53, 55 are formed between the non-magnetic layer 54 and the ferrimagnetic layers 52, 56, which comprises Fe and Co, and exchange-couples with the ferrimagnetic layers 52, 56.
申请公布号 JP2003110166(A) 申请公布日期 2003.04.11
申请号 JP20010305067 申请日期 2001.10.01
申请人 CANON INC 发明人 IKEDA TAKASHI
分类号 G01R33/09;G11B5/39;G11C11/14;H01F10/16;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L43/08 主分类号 G01R33/09
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