| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a silicon film containing a trace impurity by a controlled amount can be formed. SOLUTION: This method includes the formation of a target containing silicon and a first impurity at a first concentration, the supply of a substrate containing the first impurity at a second concentration, and the vapor deposition of a silicon film on the substrate by sputtering. The first impurity contained in the target can be transition metal, phosphorus, or germanium. When the first impurity is Ni, the first concentration of Ni in the target is adjusted to 0.01-0.5 at.%, preferably, to 0.05-0.2 at.%. In addition, the second concentration of Ni in the vapor-deposited silicon film is adjusted to 0.01-0.5 at.%. |
