发明名称 |
SEMICONDUCTOR LASER WITH WEAKLY COUPLED GRATING |
摘要 |
<p>PROBLEM TO BE SOLVED: To propose a semiconductor laser whose side mode compression ratio and single mode stability are excellent. SOLUTION: The semiconductor laser 33 with a semiconductor substrate 36, a laser layer 37 arranged on the semiconductor substrate, a waveguide 40 arranged parallel to the laser layer and a stripe shaped grating structure 39 is disclosed. The laser layer 37, the waveguide 40 and the grating structure 39 are arranged in a configuration which results in weak coupling between the laser light and the grating structure 39, so that the laser light interacts with an increased number of grating elements.</p> |
申请公布号 |
JP2003110193(A) |
申请公布日期 |
2003.04.11 |
申请号 |
JP20020229076 |
申请日期 |
2002.08.06 |
申请人 |
NANOPLUS GMBH NANOSYSTEMS & TECHNOLOGIES |
发明人 |
REITHMAIER JOHANN PETER;BACH LARS |
分类号 |
H01S5/0625;H01S5/12;H01S5/125;H01S5/22;(IPC1-7):H01S5/125 |
主分类号 |
H01S5/0625 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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