发明名称 SEMICONDUCTOR LASER WITH WEAKLY COUPLED GRATING
摘要 <p>PROBLEM TO BE SOLVED: To propose a semiconductor laser whose side mode compression ratio and single mode stability are excellent. SOLUTION: The semiconductor laser 33 with a semiconductor substrate 36, a laser layer 37 arranged on the semiconductor substrate, a waveguide 40 arranged parallel to the laser layer and a stripe shaped grating structure 39 is disclosed. The laser layer 37, the waveguide 40 and the grating structure 39 are arranged in a configuration which results in weak coupling between the laser light and the grating structure 39, so that the laser light interacts with an increased number of grating elements.</p>
申请公布号 JP2003110193(A) 申请公布日期 2003.04.11
申请号 JP20020229076 申请日期 2002.08.06
申请人 NANOPLUS GMBH NANOSYSTEMS & TECHNOLOGIES 发明人 REITHMAIER JOHANN PETER;BACH LARS
分类号 H01S5/0625;H01S5/12;H01S5/125;H01S5/22;(IPC1-7):H01S5/125 主分类号 H01S5/0625
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