| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in generation of peeling and crack which are generated in the CMP process to form damascene and in the heat cycle, by eliminating mismatch of dynamics characteristic among inorganic system insulation films used for copper diffusion preventing layer, wiring layer and via layer. SOLUTION: In this method of fabricating a copper damascene structure, an organic insulation film in the thickness of 1 to 100 nm is provided between an inorganic system insulation film and copper diffusion preventing layer, at the time of chemically and mechanically grinding the inorganic system insulation film formed on the copper diffusion preventing layer.
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