发明名称 METHOD OF FORMING AERIAL METAL WIRING ON SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method of forming aerial metal wiring to obtain an aerial wiring structure which can improve joining strength and has sufficient self-standing property. SOLUTION: A temporary supporting layer 2 is formed on a semiconductor substrate 1, this temporary supporting layer 2 has a hole 4 which reaches the semiconductor substrate 1, this hole 4 is filled with a conductive material 5, and the conductive material 5 and the semiconductor substrate 1 can be joined with pressure by pressurizing the conductive material 5.
申请公布号 JP2003110016(A) 申请公布日期 2003.04.11
申请号 JP20010303380 申请日期 2001.09.28
申请人 KOBE STEEL LTD 发明人 FUJIKAWA TAKAO;YOSHIKAWA TETSUYA
分类号 H01L23/522;H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L23/522
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