Bi2Te3 SINGLE-CRYSTAL THIN FILM AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a Bi2 Te3 single-crystal thin film which can be manufactured simply and at low costs by using a molecular beam epitaxy method. SOLUTION: In the method, a Bi2 Te3 epitaxial single crystal is manufactured on a substrate arranged inside an airtightly sealed vacuum container 1. The method comprises a buffer growth step wherein the Bi2 Te3 epitaxial single crystal is deposited on the substrate 3 at a temperature at which a Bi2 Te3 vapor pressure becomes smaller than a pressure inside the vacuum container; and an annealing step wherein the substrate temperature is increased up to a temperature at which the Bi2 Te3 vapor pressure becomes larger than the pressure inside the vacuum container 1, and the substrate temperature is decreased down to a temperature at which the Bi2 Te3 vapor pressure becomes smaller than the pressure inside the container 1.