| 摘要 |
PROBLEM TO BE SOLVED: To enable the peripheral edge of a substrate to undergo superior treatment by the use of a surface treatment solution. SOLUTION: A center gas exhaust vent 531 is provided on the underside 53 of a blocking board 5, and peripheral edge gas exhaust vents 532 are provided in the annular region of the underside 53 of the blocking board 5 corresponding to the peripheral edge of a wafer W held by a vacuum chuck 2. While an etching solution is fed from an edge rinse nozzle 3 to the peripheral edge of the underside of the wafer W, nitrogen gas is discharged out from the center gas exhaust vent 531 and peripheral edge gas exhaust vents 532 of the underside 53 of the blocking board 5 to the top surface of the wafer W. By this setup, the etching solution is prevented from flowing into a device forming a region located at the center of the wafer W, and a metal thin film formed on the under peripheral edge, end face, and upper peripheral edge of the wafer W is removed by the etching solution flowing from the undersurface to the top surface of the wafer W at the same time.
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