| 摘要 |
PURPOSE: To solve the problem that, in a conventional semiconductor circuit comprising a plurality of circuit regions using different power-supply voltages, the area of a semiconductor chip becomes large because the semiconductor circuit is manufactured in accordance with the design rule applied to a circuit region having a highest power-supply voltage. CONSTITUTION: The method of manufacturing the semiconductor integrated circuit which comprises a first circuit region 11 using a first power-supply voltage and a second circuit region 12 using a second power-supply voltage different from the first power-supply voltage is constituted in such a way that a first design rule according to the first power-supply voltage is applied to the region 11 and that a second design rule according to the second power- supply voltage is applied to the region 12. |
