| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide slurry used for CMP that can suppress the possibility of the performance and quality of a semiconductor device being spoiled and can easily improve the productive efficiency, and to provide a method of manufacturing a semiconductive device. SOLUTION: Alumina particles 2 become the main polishing particles of the slurry 1 used for CMP, and photosensitive resin particles 3 has a photosensitive acryloyl group that causes a photopolymerization reaction when the group is irradiated with an ultraviolet ray hνand is improved in adhesive force by the photopolymerization reaction. These particles are mixed in the slurry 1. Aggregates 5 are formed by causing the positively charged alumina particles 2 to adhere to the surfaces of the negatively charged resin particles 3 in the solvent 4 of the slurry 1. At the time of performing CMP on a part to be polished of a semiconductor substrate, the aggregates 5 are made to powerfully adhere to the polishing surface of a polishing pad by increasing the adhesive force of the resin particles 3 by projecting the ultraviolet ray hνtoward the slurry 1. The alumina particles 2 polish the part to be polished in a polishing environment close to that of the bonded abrasive machining method in a state where the particles 3 are substantially fixed to the polishing surface of the polishing pad through the resin particles 3.</p> |
