发明名称 |
SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER MODULE AND RAMAN AMPLIFIER USING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor laser device and a semiconductor laser module suitable for a light source for a raman amplifier obtaining a high gain stably. SOLUTION: An optical waveguide 4 having a diffraction grid 13 is provided on the emitting side of a GRIN-SCH-MQW active layer 3 emitting laser beams to output the laser beams including at least two oscillation vertical modes within the half value width of an oscillation wavelength spectrum by combination-setting an oscillation parameter including a gain area formed by the GRIN-SCH-MQW active layer 3 and the wavelength selection characteristic of the diffraction grid 13.</p> |
申请公布号 |
JP2003110194(A) |
申请公布日期 |
2003.04.11 |
申请号 |
JP20020218881 |
申请日期 |
2002.07.26 |
申请人 |
FURUKAWA ELECTRIC CO LTD:THE |
发明人 |
YOSHIDA JIYUNJI;TSUKIJI NAOKI |
分类号 |
G02F1/35;H01S5/125;(IPC1-7):H01S5/125 |
主分类号 |
G02F1/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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