发明名称 INFRARED SOLID-STATE IMAGE PICKUP DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the infrared sensor device which is reduced in noise and cost and has high sensitivity and wide dynamic range, to provide a specific cooling type infrared sensor at a low cost and to attain sensitivity improvement, noise reduction and dynamic range expansion. SOLUTION: In the infrared sensor equipped with an image pickup area 3, in which infrared detection pixels 1 for detecting incident infrared rays are two-dimensionally arrayed on a semiconductor wafer, a plurality of row selection lines located in the direction of rows inside the image pickup area 3, a plurality of signal lines 5 located in the direction of columns inside the image pickup area 3 and a plurality of signal read circuits 90 provided for each signal line 5 for reading electric signals generated on the respective signal lines 5, a signal line potential stabilizing circuit 180 is provided for holding the potential of each of signal lines 5 in a fixed potential and each of signal read circuits 90 is provided with a current/voltage converting circuit for converting a signal current to a signal voltage so that a current read system can be provided.
申请公布号 JP2003110938(A) 申请公布日期 2003.04.11
申请号 JP20010295106 申请日期 2001.09.26
申请人 TOSHIBA CORP 发明人 IIDA YOSHINORI;SHIGENAKA KEITARO;MASHIO NAOYA
分类号 H01L27/14;H01L27/146;H04N5/33;H04N5/335;H04N5/355;H04N5/357;H04N5/369;H04N5/374;(IPC1-7):H04N5/33 主分类号 H01L27/14
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