| 摘要 |
PURPOSE: A flash memory cell array is provided to increase the reliability of the flash memory cell array by reducing the influence by leakage current of over-erased cells during programming or reading operations. CONSTITUTION: The flash memory cell array includes a path transistor which is formed around a contact which electrically couples a metal wire and a common source line. The path transistor is formed on the common source line and is driven by a select signal according to the selected cell. The path transistor is further formed by implementing conductive material on the common source line. Alternatively, when another conductive material such as polysilicons on an upper portion of the source which is formed by diffusing impurities, the conductive material can operate as the path transistor.
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