| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element which further improves light pickup efficiency in the light emitting element by constituting an n-type electrode of a specific constitution and which has a long lifetime. SOLUTION: The nitride semiconductor light emitting element is a nitride semiconductor light emitting element having the n-type electrode at the predetermined position of the n-type nitride semiconductor layer. Particularly, the n-type electrode has an electrically connected first region and second region in such a manner that the backmost surface of the first region is disposed on substantially the same surface as the backmost surface of the second region as seen from the n-type electrode forming surface side. Further, the second region of the n-type electrode has higher reflectivity than that of the first region of the n-type electrode to the light from the nitride semiconductor light emitting element. |
