SEMICONDUCTOR DEVICE AND ITS FABRICATING METHOD

摘要

PROBLEM TO BE SOLVED: To solve the problems incident to the use of copper (Cu) as an interconnection material that the oxidation of copper (Cu) progresses quickly, the line resistance and the connection resistance between lines are increased, and the reliability of interconnection structure is lowered. SOLUTION: The progress of the oxidation of a copper (Cu) interconnection layer 104 is suppressed by supplying oxygen plasma 105 to the surface layer thereof thereby forming an oxidation layer 106 where the number of CuO bonds is larger than that of Cu2 O bonds (e.g. CuO bonds occupy 50% or more).