| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor magnetic sensor which readily enables quantitative control chiefly dominated by recombination and is excellent in mass production. SOLUTION: The semiconductor magnetic sensor comprises; a first semiconductor substrate of one conductivity type; a second semiconductor layer having low impurity concentration of a reverse conductivity type, which is formed on the principal plane of the first semiconductor substrate; a P<+> -type anode layer and an N<+> -type cathode layer, each having a different conductivity type from the other, which are provided in the second semiconductor layer; and a polycrystalline semiconductor layer formed on the surface of the second semiconductor layer and in a region sandwitched between the P<+> -type anode layer and the N<+> -type cathode layer.
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