发明名称 PLASMA PROCESSING APPARATUS
摘要 <p>An HF matching unit (14) and an LF matching unit (17) are separately provided. The HF matching unit (14) is disposed in a space (13) below a lower electrode (2) and at the central part below the lower electrode (2). The output of the HF matching unit (14) is electrically connected to the lower electrode (2) through a feeder rod (19) of non-coaxial structure (not through a feeder rod of coaxial structure). The high frequency power from a second high frequency power supply (18) is fed through the LF matching unit (17), an LPF (16), and the peripheral part of the lower electrode (2). Thus, even if high frequency power is used, the increase of the power loss is suppressed, and matching can be effected easily without using any special matching element.</p>
申请公布号 WO2003030241(P1) 申请公布日期 2003.04.10
申请号 JP2002009999 申请日期 2002.09.27
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