| 摘要 |
<p>The present writing reveals a method of fabricating a cathode requiring relatively few and somewhat simple steps. A novel etchant gas chemistry dispenses with needing a second passivation layer (PA2). A direct via is formed without a separate mask. Access and isolation features of a metallic gate (MG) are patterned in the same patterning operation as an associated passivation layer, dispensing with a need for separate patterning of each. Etching is effectuated with high selectivity for nitrides of silicon. The requirement for at least one passivation layer deposition, a direct via masking step, and separate patterning steps for the passivation layer and metallic gate are eliminated.</p> |
