发明名称 SILICON MONOCRYSTAL WAFER PROCESSING DEVICE, AND METHOD OF MANUFACTURING SILICON MONOCRYSTAL WAFER AND SILICON EPITAXIAL WAFER
摘要 A silicon monocrystal wafer processing device(10),comprising a processing container(11),a susceptor(12)disposed in the processing container(11)and having a silicon monocrystal wafer(19)placed on the upper surface thereof,and lift pins(14)liftably fitted to the susceptor(12)and allowing the silicon monocrystal wafer(19)to be detached from and attached to the susceptor(12)according to the lifting operation of the silicon monocrystal wafer(19)in the state of being supported from the lower surface side thereof,characterized in that the lift pins(14)are polished on the contact end face(14d)thereof with the main rear surface of the silicon monocrystal wafer(19).
申请公布号 WO03030251(A1) 申请公布日期 2003.04.10
申请号 WO2002JP09825 申请日期 2002.09.25
申请人 SHIN-ETSU HANDOTAI CO., LTD.;KONO, RYUJI;TAKAMIZAWA, SHOICHI 发明人 KONO, RYUJI;TAKAMIZAWA, SHOICHI
分类号 H01L21/683;C23C16/458;C30B25/12;C30B31/14;H01L21/205;H01L21/68;H01L21/687;(IPC1-7):H01L21/68 主分类号 H01L21/683
代理机构 代理人
主权项
地址