发明名称 Voltage switching circuit
摘要 A voltage switching circuit is disclosed which is constructed from a minimum number of transistors and prevents the threshold voltage margin from being lowered by causing high-voltage cutoff and supply voltage transfer functions heretofore performed by a single depletion transistor to be shared between two series-connected depletion transistors different in gate insulating film thickness or threshold voltage. Thus, without using enhancement transistors which involve an increase in pattern area a voltage switching circuit can be provided which is small in chip area, low in cost and high in yield and reliability and provides a stable operation with a low supply voltage which is impossible with one depletion transistor.
申请公布号 US2003067341(A1) 申请公布日期 2003.04.10
申请号 US20020292527 申请日期 2002.11.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKAMURA HIROSHI
分类号 H01L21/822;G11C5/14;G11C8/08;G11C16/08;G11C16/12;G11C16/30;H01L27/04;H01L27/088;H01L27/092;H03K17/0814;H03K17/10;H03K17/693;H03K19/003;H03K19/0185;H03L7/06;(IPC1-7):H03K17/00 主分类号 H01L21/822
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