Semiconductor laser device, semiconductor laser module and optical fiber amplifier using the semiconductor laser module

摘要

An n-InP cladding layer, a GRIN-SCH-MQW active layer, a p-InP spacer layer, a p-InP cladding layer and a p-InGaAsP contact layer are sequentially laminated on an n-InP substrate, and an n-type electrode is disposed on a lower portion of the n-InP substrate. Also, a diffraction grating is disposed on a portion region of the p-InP spacer layer, and an insulating film is disposed on the p-InGaAsP contact layer corresponding to the diffraction grating so that injected current is prevented from flowing in respect to the diffraction grating.