发明名称 |
METHOD FOR FORMING A PHASE-SHIFTING MASK FOR SEMICONDUCTOR DEVICE MANUFACTURE |
摘要 |
Abstract of Disclosure The present invention relates to a method for forming a multi-transmittance phase-shifting mask for the manufacture of highly integrated semiconductor devices in which portions of a plurality of light blocking layers are selectively removed to modify the transmittance of various regions of the mask and suppress undesired patterns, such as ghost images and side lobe effects to permit increased integration levels and improved yield in the production of the semiconductor devices.
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申请公布号 |
US2003068563(A1) |
申请公布日期 |
2003.04.10 |
申请号 |
US20010886984 |
申请日期 |
2001.06.25 |
申请人 |
HONG JI-SUK;KIM HEE-BOM;KOO SANG-SOOL |
发明人 |
HONG JI-SUK;KIM HEE-BOM;KOO SANG-SOOL |
分类号 |
H01L21/027;G03F1/00;(IPC1-7):G03C5/00;G03G16/00;G03F9/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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