发明名称 METHOD OF CHARACTERISING AN IMPLANTATION STEP IN A SUBSTRATE OF MATERIAL
摘要 The invention relates to a method of characterising, ex-situ, the implantation dose of at least one species in a substrate. The inventive method is characterised in that it comprises: an annealing step that is intended to cause the blistering of the species in the implanted substrate; a substrate surface image acquisition step; and an image processing step. The implantation dose characteristics are deduced from the image processing step.
申请公布号 WO03030249(A2) 申请公布日期 2003.04.10
申请号 WO2002FR03281 申请日期 2002.09.26
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;MALEVILLE, CHRISTOPHE;SCHWARZENBACH, WALTER 发明人 MALEVILLE, CHRISTOPHE;SCHWARZENBACH, WALTER
分类号 G01N25/72;H01L21/265;H01L21/324;H01L21/66 主分类号 G01N25/72
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