Semiconducting structure for controling current has channel region with channel conduction region of first conductivity type and higher than basic doping level of channel region

摘要

The arrangement has at least a first semiconductor region (2) of a first conductivity type at least partly containing a current path and a channel region (22) forming part of the first region with a basic doping level and current influenced by at least one depletion zone (23,24). The channel region has a channel conduction region (225) for guiding a current that is of the first conductivity type with higher than the basic doping level. AN Independent claim is also included for the following: a method of manufacturing a semiconducting structure for controling a current.