| 摘要 |
A semiconductor device of the present invention comprises a first split Pad electrode which is electrically connected to wirings and a MOSFET and a second split Pad electrode which is not electrically connected to wirings and a MOSFET. Then, a passivation film which covers a part of the surface of the second split pad electrode is formed and a non-split pad electrode which covers the surfaces of the first and second split pad electrodes which are not covered with the passivation film is formed.
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