发明名称 Switching circuit capable of improving memory write timing and method thereof
摘要 In DRAM system where quad rate transmission is used, at least one latch is disposed within a switching circuit for increasing the data valid windows of a portion of transmitted data segments. For example, in a sequence of transmitted data segments, only the odd numbered segments are having their data valid windows increased. Thereby, the writing process of the system is improved. The system further provides at least one delay circuit for suitably matching signals for a desired result.
申请公布号 US2003067834(A1) 申请公布日期 2003.04.10
申请号 US20020247664 申请日期 2002.09.18
申请人 LAI JIIN 发明人 LAI JIIN
分类号 G06F13/16;G11C7/10;G11C7/22;G11C11/4076;G11C11/408;(IPC1-7):G11C8/00 主分类号 G06F13/16
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