发明名称 PLASMA PROCESSING APPARATUS
摘要 An HF matching unit (14) and an LF matching unit (17) are separately provided. The HF matching unit (14) is disposed in a space (13) below a lower electrode (2) and at the central part below the lower electrode (2). The output of the HF matching unit (14) is electrically connected to the lower electrode (2) through a feeder rod (19) of non−coaxial structure (not through a feeder rod of coaxial structure). The high frequency power from a second high frequency power supply (18) is fed through the LF matching unit (17), an LPF (16), and the peripheral part of the lower electrode (2). Thus, even if high frequency power is used, the increase of the power loss is suppressed, and matching can be effected easily without using any special matching element.
申请公布号 WO03030241(A1) 申请公布日期 2003.04.10
申请号 WO2002JP09999 申请日期 2002.09.27
申请人 TOKYO ELECTRON LIMITED;KABUSHIKI KAISHA TOSHIBA;HIMORI, SHINJI;SAKAI, ITSUKO 发明人 HIMORI, SHINJI;SAKAI, ITSUKO
分类号 H05H1/46;B01J19/08;C23C16/509;H01J37/32;H01L21/00;H01L21/302;H01L21/3065;H01L21/311;H01L21/3213;(IPC1-7):H01L21/306 主分类号 H05H1/46
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