发明名称 |
Method for forming dual oxide layers at bottom of trench |
摘要 |
Embodiments of the present invention are directed to an improved method for forming dual oxide layers at the bottom of a trench of a substrate. A substrate has a trench which includes a bottom and a sidewall. The trench may be created by forming a mask oxide layer on the substrate; defining the mask oxide layer to form a patterned mask oxide layer and exposing a partial surface of the substrate to form a window; and using the patterned mask oxide layer as an etching mask to form the trench in the window. A first oxide layer is formed on the sidewall and the bottom of the trench of the substrate. A photoresist layer is formed on the substrate, filling the trench of the substrate. The method further comprises partially etching back the photoresist layer to leave a remaining photoresist layer in the trench. The height of the remaining photoresist layer is lower than the depth of the trench. A curing treatment of the remaining photoresist layer is performed after the partial etching. The patterned mask oxide layer and a portion of the first oxide layer are removed to leave a remaining first oxide layer at the bottom of the trench. The remaining photoresist layer is removed. A second oxide layer is formed on the substrate covering at least the remaining first oxide layer to form the dual oxide layers at the bottom of the trench.
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申请公布号 |
US2003068901(A1) |
申请公布日期 |
2003.04.10 |
申请号 |
US20020232260 |
申请日期 |
2002.08.29 |
申请人 |
MOSEL VITELIC, INC. |
发明人 |
CHUANG CHIAO-SHUN;CHANG CHIEN-PING;TSENG MAO-SONG;NI CHENG-TSUNG |
分类号 |
H01L21/027;H01L21/762;(IPC1-7):H01L21/76;H01L21/31;H01L21/469 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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