| 摘要 |
A susceptor for semiconductor manufacturing equipment obtained by laminating plural aluminum nitride (AlN) ceramic substrates with a high melting point metallic layer and an adhesive layer, and in particular, the aluminum nitride (AlN) ceramic substrate contains a compound of a Group 3a element in an amount of from 0.01 to 1% by weight in terms of the element, and the balance consisting essentially of aluminum nitride (AlN), in which the average particle size of an AlN crystal is from 2 to 5 mum. The susceptor is prepared by obtaining substrates from a mixture of the material powders through the steps of molding, sintering in a non-oxidizing atmosphere at 1,600 to 2,000° C. and forming into a desired substrate shape, and then laminating a plurality of the thus obtained substrate with a high melting point metallic layer and an adhesive layer inserted between the substrates, firing the laminate in a non-oxidizing atmosphere at 1,500 to 1,700° and finishing the fired laminate.
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