发明名称 |
PLASMA PROCESSOR AND PLASMA PROCESSING METHOD |
摘要 |
While a wafer (W) mounted on a lower electrode (2) is etched as predetermined, the top of a lifter pin (60) electrically connected to the lower electrode (2) remains pressed on the wafer (W) by a spring built in the lifter pin (60). Most part of the rear of the wafer (W) corresponding to a through hole (2a) receives the contact of the top of this lifter pin (60) to keep a condition similar to a contact with the lower electrode (2). Thus, the whole of a substrate to be processed is processed uniformly, so that the uniformity of the in−plane processing of the substrate to be processed is more improved than conventional.
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申请公布号 |
WO03030235(A1) |
申请公布日期 |
2003.04.10 |
申请号 |
WO2002JP08968 |
申请日期 |
2002.09.04 |
申请人 |
TOKYO ELECTRON LIMITED;KOBAYASHI, YOSHIYUKI;NAGAKUBO, KEIICHI |
发明人 |
KOBAYASHI, YOSHIYUKI;NAGAKUBO, KEIICHI |
分类号 |
H01L21/302;H01J37/32;H01L21/00;H01L21/3065;H01L21/687;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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