发明名称 PLASMA PROCESSOR AND PLASMA PROCESSING METHOD
摘要 While a wafer (W) mounted on a lower electrode (2) is etched as predetermined, the top of a lifter pin (60) electrically connected to the lower electrode (2) remains pressed on the wafer (W) by a spring built in the lifter pin (60). Most part of the rear of the wafer (W) corresponding to a through hole (2a) receives the contact of the top of this lifter pin (60) to keep a condition similar to a contact with the lower electrode (2). Thus, the whole of a substrate to be processed is processed uniformly, so that the uniformity of the in−plane processing of the substrate to be processed is more improved than conventional.
申请公布号 WO03030235(A1) 申请公布日期 2003.04.10
申请号 WO2002JP08968 申请日期 2002.09.04
申请人 TOKYO ELECTRON LIMITED;KOBAYASHI, YOSHIYUKI;NAGAKUBO, KEIICHI 发明人 KOBAYASHI, YOSHIYUKI;NAGAKUBO, KEIICHI
分类号 H01L21/302;H01J37/32;H01L21/00;H01L21/3065;H01L21/687;(IPC1-7):H01L21/306 主分类号 H01L21/302
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