FLASH MEMORY CELL WITH ENTRENCHED FLOATING GATE AND METHOD FOR OPERATING SAID FLASH MEMORY CELL

摘要

The invention relates to a programmable read-only memory cell (MC) with a floating gate (FG) arranged in a trench, an epitaxial channel layer (EPI), embodied on the floating gate (FG), which connects a source electrode (S) with a drain electrode (D) and a selection gate (CG) arranged above the channel layer (EPI).