Analysis process used for analyzing silicon-germanium alloys used in optoelectronics comprises taking a Raman spectrum of a sample, and evaluating the Raman frequencies and intensities of the alloy layer

摘要

Analysis process comprises taking a Raman spectrum of a sample, and evaluating the Raman frequencies and intensities of the Si-Si modes and the Si-Ge modes of the alloy layer. One or more spectrum parts lying outside of the Si-Ge modes and the Si-Si modes are evaluated as oscillating modes. An Independent claim is also included for a device for producing semiconductor layer structures having Si-Ge alloy layers comprising an epitaxy unit (14) for epitaxially growing layers, a control unit (42) for controlling and/or regulating the production of the layers, a Raman spectrometer (12) for determining the Raman spectrum of a layer produced and an evaluating unit (34) for evaluating the spectrum. Preferably the spectrum parts of local Si-Si modes are evaluated as oscillating modes.